Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes

An ultralow specific on-resistance (Ron,sp) accumulation-mode LDMOS (ALDMOS) is proposed and investigated by simulations experiments. The ALDMOS features two separated integrated diodes (SID) above the N-drift surface, which forms high density electron accumulation layer in on-state. Meanwhile, SID not only assists depleting to increase doping centration (Nd) off-state, but also modulates lateral electric field improve breakdown voltage (BV). Thus, could achieve Ron,sp maintain BV simultaneously. layout key fabrication processes of are demonstrated. measured results show that realizes a 483V 29.3mΩ∙cm2, with FOM value 7.96MW/cm2. Its decreased 33.7% compared triple RESURF at same BV.